Researchers
Develop 128Mb STT-MRAM with World’s Fastest Write Speed for Embedded Memory
December 28, 2018 -- A research team, led by
Professor Tetsuo Endoh at Tohoku
University , has
successfully developed 128Mb-density STT-MRAM (spin-transfer torque magnetoresistive
random access memory) with a write speed of 14 ns for use in embedded memory
applications, such as cache in IOT and AI. This is currently the world's
fastest write speed for embedded memory application with a density over 100Mb
and will pave the way for the mass-production of large capacity STT-MRAM.
STT-MRAM
is capable of high-speed operation and consumes very little power as it retains
data even when the power is off. Because of these features, STT-MRAM is gaining
traction as the next-generation technology for applications such as embedded
memory, main memory and logic. Three large semiconductor fabrication plants
have announced that risk mass-production will begin in 2018.
As
memory is a vital component of computer systems, handheld devices and storage,
its performance and reliability are of great importance for green energy
solutions.
The
current capacity of STT-MRAM is ranged between 8Mb-40Mb. But to make STT-MRAM
more practical, it is necessary to increase the memory density. The team at the
Center for Innovative Integrated Electronic Systems (CIES) has increased the
memory density of STT-MRAM by intensively developing STT-MRAMs in which
magnetic tunnel junctions (MTJs) are integrated with CMOS. This will
significantly reduce the power-consumption of embedded memory such as cache and
eFlash memory.
MTJs
were miniaturized through a series of process developments. To reduce the
memory size needed for higher-density STT-MRAM, the MTJs were formed directly
on via holes - small openings that allow a conductive connection between the
different layers of a semiconductor device. By using the reduced size memory
cell, the research group has designed 128Mb-density STT-MRAM and fabricated a
chip.
In
the fabricated chip, the researchers measured a write speed of subarray. As a
result, high-speed operation with 14ns was demonstrated at a low power supply
voltage of 1.2 V. To date, this is the fastest write speed operation in an
STT-MRAM chip with a density over 100Mb in the world.
The
results of this research were presented at the 2018 International Electron
Devices Meeting held in San Francisco ,
U.S.A. , on
December 5, 2018.