Researchers
Develop 128Mb STT-MRAM with World’s Fastest Write Speed for Embedded Memory
December 28, 2018 -- A research team, led by
Professor Tetsuo Endoh at Tohoku 
 University 
STT-MRAM
is capable of high-speed operation and consumes very little power as it retains
data even when the power is off. Because of these features, STT-MRAM is gaining
traction as the next-generation technology for applications such as embedded
memory, main memory and logic. Three large semiconductor fabrication plants
have announced that risk mass-production will begin in 2018.
As
memory is a vital component of computer systems, handheld devices and storage,
its performance and reliability are of great importance for green energy
solutions.
The
current capacity of STT-MRAM is ranged between 8Mb-40Mb. But to make STT-MRAM
more practical, it is necessary to increase the memory density. The team at the
Center for Innovative Integrated Electronic Systems (CIES) has increased the
memory density of STT-MRAM by intensively developing STT-MRAMs in which
magnetic tunnel junctions (MTJs) are integrated with CMOS. This will
significantly reduce the power-consumption of embedded memory such as cache and
eFlash memory.
MTJs
were miniaturized through a series of process developments. To reduce the
memory size needed for higher-density STT-MRAM, the MTJs were formed directly
on via holes - small openings that allow a conductive connection between the
different layers of a semiconductor device. By using the reduced size memory
cell, the research group has designed 128Mb-density STT-MRAM and fabricated a
chip.
In
the fabricated chip, the researchers measured a write speed of subarray. As a
result, high-speed operation with 14ns was demonstrated at a low power supply
voltage of 1.2 V. To date, this is the fastest write speed operation in an
STT-MRAM chip with a density over 100Mb in the world.
The
results of this research were presented at the 2018 International Electron
Devices Meeting held in San Francisco ,
 U.S.A. 
 
 



